? 2002 ixys all rights reserved 98659-b (9/02) hiperfast tm igbt ixgh 15n120b ixgt 15n120b c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features ? international standard packages jedec to-268 surface and jedec to-247 ad ? low switching losses, low v (sat) ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switched-mode and resonant-mode power supplies advantages ? high power density ? suitable for surface mounting ? easy to mount with 1 screw, (isolated mounting screw hole) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 3.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 3.2 v t j = 125 c 2.5 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c110 t c = 110 c15a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 180 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixgt) g e c (tab) v ces = 1200 v i c25 =30a v ce(sat) = 3.2 v t fi(typ) = 160 ns
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh 15n120b ixgt 15n120b dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 ; v ce = 10 v, 12 15 s pulse test, t 300 s, duty cycle 2 % c ies 1720 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 95 pf c res 35 pf q g 69 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 26 nc t d(on) 25 ns t ri 15 ns t d(off) 180 280 ns t fi 160 320 ns e off 1.75 3.0 mj t d(on) 25 ns t ri 18 ns e on 0.60 mj t d(off) 300 ns t fi 360 ns e off 3.5 mj r thjc 0.65 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c110 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 ? inductive load, t j = 25 c i c = i c110 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 ? min recommended footprint to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161
? 2002 ixys all rights reserved ixgh 15n120b ixgt 15n120b v ce - volts 0246810 i c - amperes 0 10 20 30 40 50 5v t j = 25 o c 7v v gs = 15v 13v 11v 9v v ge = 15v t j - degrees c -25 0 25 50 75 100 125 150 v ce (sat) - normalized 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i c = 30a i c = 15a i c = 7.5a v ce - volts 0 5 10 15 i c - amperes 0 25 50 75 100 125 150 t j = 25 o c 13v v ge = 15v 11v 9v 7v 5v v ce - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 v ge - volts 45678910 i c - amperes 0 5 10 15 20 25 30 35 40 45 50 55 60 t j = 125 o c t j = 25 o c t j = -40 o c v ce - volts 0246810 i c - amperes 0 10 20 30 40 50 t j = 125 o c 5v 7v v gs = 15v 13v 11v 9v ciss coss crss fig. 1. saturation voltage characteristics @ 25 o c fig. 2. extended output characteristics fig. 3. saturation voltage characteristics @ 125 o c fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh 15n120b ixgt 15n120b fig. 9. gate charge fig. 11. thermal impedance fig. 10. turn-off safe operating area fig. 7. dependence of e off on i c. fig. 8. dependence of e off on r g . pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.2 v ce - volts 0 200 400 600 800 1000 1200 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 102030405060708090 v ge - volts 0.0 2.5 5.0 7.5 10.0 12.5 15.0 r g - ohms 0 102030405060 e (off) - millijoules 0 1 2 3 4 5 6 7 8 i c - amperes 5 101520253035 e (off) - millijoules 0 1 2 3 4 5 6 7 8 v ce = 600v i g = 15ma i c = 15a t j = -55 to +125c r g = 10 ? dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 10 ? t j = 125c 30 t j = 125c i c = 15a e (off) i c = 7.5a i c = 30a e (off) e (off) e (off) 0.6
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